Keywords
Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Semiconducting indium compounds »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Semiconducting gallium compounds < Semiconducting indium compounds < Semiconducting indium gallium arsenide  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000781 (2002) Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000782 (2002) Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000791 (2002) Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000829 (2002) High-power mid-infrared light emitting diodes grown by MOVPE
000973 (2001) Mathematical simulation and experimental study of semiconductor quaternary solid solutions of substitution of the In1-xGaxP 1-yAsy system
000C09 (2000) 8 W continuous wave operation of InGaAsN lasers at 1.3 μm
000D53 (1999) Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser
000D62 (1999) Positive feedback for resonant injection in cascade light sources
000D89 (1999) High power CW operation of InGaAsN lasers at 1.3 μm
000E15 (1999) 3.9 W CW power from sub-monolayer quantum dot diode laser
000E16 (1999) 3.5W CW operation of quantum dot laser
000F24 (1998) Room temperature InAs photodiode-InGaAs LED pairs for methane detection in the mid-IR
001230 (1996) Self-consistent calculation of current-voltage characteristics of resonant tunnelling structures with type II heterojunctions
001237 (1996) Peculiarities of the initial stage of Zn diffusion into InP from polymer spin-on films
001247 (1996) Interface electroluminescence of confined carriers in type II broken-gap p-Ga-In-AsSb/p-InAs single heterojunction
001359 (1995) Properties of the surface of HgCdTe crystals with passivating indium sulfide layers

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Semiconducting indium compounds" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Semiconducting indium compounds" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Semiconducting indium compounds
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024