Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « SIMS »
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List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000582 (2003-01-25) Zinc(P) diffusion in In0.53Ga0.47As and GaSb for TPV devices
000789 (2002) Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si
000B84 (2000) Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties
000D63 (1999) Plasma-assisted MBE growth of GaN and InGaN on different substrates
000F46 (1998) Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
000F55 (1998) Experimental studies of the initial diffusion stage in semiconductors
001446 (1994-03) Redistribution of beryllium in InSb and InAs resulting from ion implantation and subsequent annealing
001470 (1994) The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy
001473 (1994) Redistribution and incorporation of Si in GaAs due to indium doping

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