Keywords
Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Roughness »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Rotatory power < Roughness < Rovibrational absorption spectra  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000033 (2012) Self-assembly of C60 fullerenes on quasi-one-dimensional Si(111)4×1-In surface
000038 (2012) Ordered Mn-diluted Au/Si(111) reconstructions
000044 (2012) First-principles study of Si(111)√31 x √31-In reconstruction
000051 (2012) Characterization of Si(111)√3 x √3-(Au,In) surface by optical second-harmonic generation
000085 (2011) C60 adsorption onto the one-atomic-layer In films on Si(111) surface
000101 (2010) Peculiarities of Al magic cluster self-assembly on Si( 10 0) surface
000121 (2010) Cooperative phenomena in self-assembled nucleation of 3 x 4-In/Si(100) surface magic clusters
000247 (2007) ITO deposited by pyrosol for photovoltaic applications
000360 (2005) Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure
000364 (2005) Modified Si(100)4 × 3-In nanocluster arrays
000437 (2004) Well-ordered (1 0 0) InAs surfaces using wet chemical treatments
000438 (2004) Weak antilocalization in quantum wells in tilted magnetic fields
000442 (2004) Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness
000491 (2004) Correlations between electrical and optical properties for OMVPE InN
000997 (2001) Energy diagram and recombination mechanisms in InGaN/AlGaN/GaN heterostructures with quantum wells
000B40 (2000) Study of polish material removal by electrochemical method on different compound semiconductors
000F59 (1998) Electron channel with high carrier mobility at the interface of type-II broken-gap p-GaInAsSb/p-InAs single heterojunctions

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Roughness" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Roughness" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Roughness
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024