Photodiode < Photodiodes < Photoelasticity

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000105 (2010)		Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000124 (2010)		Compact optoelectronic oscillators using WGM modes on fused silica and MgF2 mini-disks resonators
000235 (2007)		Performance of InAs-based infrared photodiodes
000245 (2007)		Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
000354 (2005)		P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
000370 (2005)		InSb focal plane arrays with frame accumulation
000394 (2005)		384x288 MCT LWIR FPA
000400 (2004-06)		Impulse Response of a Heterojunction MSM Photodiode
000413 (2004-04)		Investigation of Characteristics of InSb-Based Photodiode Linear Arrays
000528 (2003-08)		Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000530 (2003-08)		High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area
000638 (2003)		Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000730 (2002-08)		Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000781 (2002)		Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000908 (2001-04)		Photodiodes for a 1.5-4.8 μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures
000D27 (1999-02)		Long-wavelength photodiodes based on Ga1-xInxAsySb1-y with composition near the miscibility boundary
000D86 (1999)		IR imager based on 128x128 HgCdTe staring focal plane array
000F24 (1998)		Room temperature InAs photodiode-InGaAs LED pairs for methane detection in the mid-IR
001030 (1997-06)		Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures
001155 (1996-09)		Photodiodes based on InAs1-xSbx solid solutions for the spectral band in the range 3-5 μm
001176 (1996-06)		Optimum heterostructure parameters of a threshold avalanche photodiode with separate absorption and multiplication regions

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