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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Photodetector < Photodetectors < Photodielectric effect  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000354 (2005) P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
000370 (2005) InSb focal plane arrays with frame accumulation
000394 (2005) 384x288 MCT LWIR FPA
000740 (2002-06) Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000881 (2001-09) Electronic Properties of InAs-Based Metal-Insulator-Semiconductor (MIS) Structures
000883 (2001-09) Arrays of 128 × 128 Photodetectors Based on HgCdTe Layers and Multilayer Heterostructures with GaAs/AlGaAs Quantum Wells
000992 (2001) Formation and investigation of photosensitive structures based on laser-deposited CuInSe2-2ZnSe films
000B80 (2000) InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers
000C38 (1999-10) Production and properties of In/HgGa2S4 Schottky barriers
000C76 (1999-07) Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions
000C78 (1999-07) Heterojunctions utilizing CuInxGa1-xTe2 thin films
000C95 (1999-05) Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them
000F04 (1998-01) Photoelectric properties of structures based on TlInS2 single crystals
001179 (1996-06) Focal arrays based on HgCdTe photodiodes for the 3-5- and 8-12-μm spectral regions
001253 (1996) Electric and photoelectric properties of doped InSb/Al2O3 thin layers at 300 K
001274 (1995-12) Infrared array photodetectors for the 8-20-μm range, based on superphotosensitive films of a solid solution
001332 (1995-02) Strained thin-layer InAs1-x-ySbxBiy/InSb heterostructures: calculation of certain physical properties

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