Photoconductive cells < Photoconductivity < Photoconductor materials

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List of bibliographic references

Number of relevant bibliographic references: 154.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000075 (2011)		Intraband spectroscopy of excited quantum dot levels by measuring photoinduced currents
000081 (2011)		High-Vacuum Evaporation of n-CuIn3Se5 Photoabsorber Films for Hybrid PV Structures
000100 (2010)		Plasmonic effects and optical properties of InN composites with In nanoparticles
000119 (2010)		Effect of Pressure on the Electrical Conductivity of p - TlInSe2 Single Crystals
000141 (2009)		Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation
000142 (2009)		Photoconductivity of oxidized nanostructured PbTe(In) films
000153 (2009)		Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures
000234 (2007)		Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer
000395 (2004-06-25)		Experimental Separation of Rashba and Dresselhaus Spin Splittings in Semiconductor Quantum Wells
000423 (2004-02)		Structures Based on Cu(Ag)InnSm Semiconductor Compounds
000424 (2004-02)		Photosensitive Structures Based on the Compound AgIn11S17
000433 (2004-01)		Photoconductivity of Lead Telluride-Based Doped Alloys in the Submillimeter Wavelength Range
000576 (2003-02)		Fabrication and Properties of Photosensitive Structures Based on ZnIn2S4 Single Crystals
000580 (2003-02)		Charge Transport in Fe-p-InP Diode Structures
000607 (2003)		Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells
000609 (2003)		Resonant states of carbon acceptor in p-InGaAs/GaAs δ-doped quantum well heterostructure
000610 (2003)		Relation of the photorefraction and optical-damage resistance to the intrinsic defect structure in LiNbO3 crystals
000674 (2003)		Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
000695 (2003)		An increase of photorefractive sensitivity in In:LiNbO3 crystal
000702 (2002-12)		Weak Antilocalization and Spin-Orbit Interaction in a In0.53Ga0.47As/InP Quantum Well in the Persistent Photoconductivity State
000761 (2002-03)		Solar Cells Based on CuIn1 - xGaxSe2 Films Obtained by Pulsed Laser Evaporation

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