Phosphorus compound < Phosphorus compounds < Phosporous concentration

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List of bibliographic references

Number of relevant bibliographic references: 57.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000400 (2004-06)		Impulse Response of a Heterojunction MSM Photodiode
000419 (2004-03)		Internal Optical Loss in Semiconductor Lasers
000426 (2004-02)		Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers
000510 (2003-11)		1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
000515 (2003-10)		InAs Based Multicomponent Solid Solutions for Thermophotovoltaic Converters
000520 (2003-09)		Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates
000527 (2003-08)		On the Charge-Transport Mechanisms in Cr-n-InP and Mo-n-InP Diode Structures
000532 (2003-08)		Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000533 (2003-07-25)		Heterolaser Frequency Tuning under the Action of Ultrasonic Waves
000559 (2003-04)		High-Power 1.7-1.8 μm Single-Mode Laser Diodes
000574 (2003-02)		Low-Threshold-Current 1.2-1.5 μm Laser Diodes Based on AlInGaAs/InP Heterostructures
000575 (2003-02)		Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55 μm) InGaAsP/InP Laser Diodes
000580 (2003-02)		Charge Transport in Fe-p-InP Diode Structures
000702 (2002-12)		Weak Antilocalization and Spin-Orbit Interaction in a In0.53Ga0.47As/InP Quantum Well in the Persistent Photoconductivity State
000710 (2002-11)		High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures
000717 (2002-09)		Synthesis and Crystal Structure of New Double Indium Phosphates MI3In(PO4)2 (MI = K and Rb)
000718 (2002-09)		Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers
000730 (2002-08)		Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000740 (2002-06)		Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000745 (2002-05)		Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
000758 (2002-04)		Long-Term Variation of Electrical and Photoelectric Characteristics of Pd-p-InP Diode Structures

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