Ostwald ripening < Output power < Overhauser effect

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]

Ident.	Authors (with country if any)	Title
000010 (2013)		The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
000089 (2010)		Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
000156 (2009)		High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000189 (2008)		Quantum dot photonics : edge emitter, amplifier and VCSEL
000192 (2008)		Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power
000213 (2008)		Double integrated nanostructures for pulsed 0.9-μm laser diodes
000218 (2008)		Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure
000219 (2008)		A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000241 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
000272 (2007)		Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs
000276 (2006)		Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
000277 (2006)		Two-frequency coupled-cavity vertical-cavity surface-emitting lasers
000278 (2006)		Tunable coherent infrared source from 5-16 μm based on difference-frequency mixing in an indium-doped GaSe crystal
000281 (2006)		Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100-1230-nm spectral range
000312 (2006)		Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000331 (2006)		1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000373 (2005)		High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
000387 (2005)		Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
000662 (2003)		High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000807 (2002)		New diode lasers with leaking emission in an optical cavity
000815 (2002)		Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers

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