Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Operating mode »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Operating conditions < Operating mode < Operation  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
000180 (2009) A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth
000592 (2003) Vapor growth of Pb1-xInxTe crystals
000620 (2003) Photoelectronics for a new generation of electron-optical equipment
000650 (2003) InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
000687 (2003) Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique
000688 (2003) Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000811 (2002) Microstructure and electrophysical properties of SnO2, ZnO and In2O3 nanocrystalline films prepared by reactive magnetron sputtering
000822 (2002) Indium segregation kinetics in MOVPE of InGaN-based heterostructures
000840 (2002) Dislocations and 90°-twins in LEC-grown InP crystals
000844 (2002) Determination of the melt undercooling required for producing AlxGayIn1-x-ySb1-zBiz/InSb heterostructures
000930 (2001) Thermodynamic analysis of the MBE growth of GaInAsN
000937 (2001) Surface segregation in group-III nitride MBE
000963 (2001) Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator
000984 (2001) InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
000B68 (2000) LPE growth of GaSb and Sb-based solid solutions
000B78 (2000) Indium segregation kinetics in InGaAs ternary compounds
000D55 (1999) Self-organized InAs quantum dots in a silicon matrix
000F53 (1998) Flux growth of MBO3 (M = In, Lu, Sc) crystals
000F75 (1998) AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions
001367 (1995) Molecular beam epitaxial growth of InSb/GaAs(100) and InSb/Si(100) heteroepitaxial layers (thermodynamic analysis and characterization)
001393 (1995) Conditions for LPE growth of InAs1-x-ySbxBiy/InSb heterostructures

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Operating mode" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Operating mode" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Operating mode
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024