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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Nitrogen additions < Nitrogen compounds < Nitrogen crown compound  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000403 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000406 (2004-05) Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells
000417 (2004-03) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000523 (2003-09) Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells
000566 (2003-03) Intrinsic and Zn-, Ce-, Tb-, Er-, Sm-, and Eu-Activated Photoluminescence of Pseudoamorphous GaN and InGaN Thin Films
000705 (2002-12) Band-Edge Line-up in GaAs/GaAsN/InGaAs Heterostructures
000709 (2002-11) Room-Temperature Photoluminescence at 1.55 μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates
000729 (2002-08) Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
000741 (2002-06) Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells
000776 (2002-01) Evaluation of Physical Parameters for the Group III Nitrates: BN, AlN, GaN, and InN
000857 (2001-12-31) Near-Field Magnetophotoluminescence Spectroscopy of Composition Fluctuations in InGaAsN
000899 (2001-05) X-ray Diffractometric Study of the Influence of a Buffer Layer on the Microstructure of Molecular-Beam Epitaxial InN Layers of Different Thicknesses
000905 (2001-04) The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1)
000A74 (2000-06) Specifics of MOCVD Formation of InxGa1 - xN Inclusions in a GaN Matrix
000A90 (2000-05) Long-Wavelength Emission in InGaAsN/GaAs Heterostructures with Quantum Wells
000B00 (2000-04) Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots

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