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Naphthalene < Narrow band gap semiconductors < Nasicon compounds  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]
Ident.Authors (with country if any)Title
000022 (2013) Magnetoplasmon excitations from integer-filled Landau levels in narrow-gap quantum wells
000056 (2011) Theory of g-factor enhancement in narrow-gap quantum well heterostructures
000090 (2010) Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor
000139 (2009) Shallow traps and the space-charged-induced limitation of the injection current in PbSnTe:In narrow-gap ferroelectric
000144 (2009) Novel metal-template assembled highly-functionalized cyanoporphyrazine ytterbium and vanadium complexes for potential photonic and optoelectronic applications
000151 (2009) InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000159 (2009) Giant Magnetoresistance in Narrow-Gap Ferroelectric-Semiconductor PbSnTe:In
000195 (2008) Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3-5 μm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3-5 μm)
000348 (2005) QD lasers : Physics and applications
000358 (2005) Optical properties of InN related to surface plasmons
000583 (2003-01-25) Low-Bandgap Ge and InAsSbP/InAs-Based TPV Cells
000799 (2002) Pb and In codeposition in the vacuum growth of PbTe(In) films on Si substrates
000849 (2002) Band gap of hexagonal InN and InGaN alloys
000853 (2002) Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
000915 (2001-03) Optically Pumped Mid-Infrared InGaAs(Sb) LEDs
000A54 (2000-07-20) Structure and Electric Properties of InTe1 - xSex, In1 - xGaxTe, and In1 - xTlxTe Solid Solutions
000B95 (2000) EXAFS and electrical studies of new narrow-gap semiconductors : InTe1-xSex and In1-xGaxTe
000C20 (1999-12-01) Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures
000C68 (1999-08) Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5μm
000C81 (1999-07) Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
000D21 (1999-03) Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure

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