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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Multiple layer < Multiple quantum well < Multiple scattering  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000082 (2011) Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures
000086 (2011) Application of the electron probe microanalysis in nitride-based heterostructures investigation
000111 (2010) Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties
000166 (2009) Deep-level transient spectroscopy studies of light-emitting diodes based on multiple-quantum-well InGaN/GaN structure
000184 (2008) Tilted magnetic field quantum magnetotransport in the double quantum well with a sizable bulk g-factor : InxGa1-xAs/GaAs
000201 (2008) MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
000212 (2008) Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
000224 (2007) The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
000246 (2007) InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
000264 (2007) Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
000450 (2004) Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure
000599 (2003) THz radiation from optically pumped n-type GaAs/InGaAs multi quantum well heterostructures
000607 (2003) Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells
000639 (2003) Localized and resonant shallow donor states in GaAs/InGaAs double-quantum-well heterostructures
000651 (2003) InGaAsN/GaAs QD and QW structures grown by MOVPE
000836 (2002) Effects of resonant mode coupling on near- and far-field characteristics of InGaN-based lasers
000955 (2001) Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
000B33 (2000) Threshold characteristics of InGaAsP/InP multiple quantum well lasers
001107 (1997) Mechanisms of acoustooptical interaction in resonant systems based on AlGaInAs

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