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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Measuring instrument < Measuring methods < Mechanical activation  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]
Ident.Authors (with country if any)Title
000209 (2008) Energy characteristics of excitons in InGaN/GaN heterostructures
000235 (2007) Performance of InAs-based infrared photodiodes
000238 (2007) Optical characterization of the LiInS2 and LiInSe2 crystals
000245 (2007) Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
000268 (2007) Characterization of the mid-infrared nonlinear crystals LiInSe2 and LiInS2 in the IR range
000565 (2003-03) Investigation of the Physical Properties of Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: 1. Photoluminescence
000905 (2001-04) The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1)
000917 (2001-03) InGaAs Nanodomains Formed in situ on the Surface of (Al,Ga)As
000919 (2001-03) Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs
000922 (2001-02) Subnanometer Resolution in Depth Profiling Using Glancing Auger Electrons
000A14 (2001) Absolute frequency measurement of the In+ clock transition with a mode-locked femtosecond laser
000A48 (2000-09-20) A Spread in Electrophysical Parameters of Ferroelectric Piezoelectric Solid Solutions and Its Minimization
000A70 (2000-06-15) Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses
000A79 (2000-06) A Capacitance Technique for the Study of Trapping Centers in Powdered Luminophors
000A84 (2000-05) Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
000A88 (2000-05) New approach to the independent ohmic contact formation in the structures with two parallel isotype quantum wells
000A91 (2000-05) A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns
000C94 (1999-05) Quasielastic light scattering in the near IR from photoexcited electron-hole plasma created in a GaAs layer with embedded InAs quantum dots
000D19 (1999-03) Iterative solution of the inverse problem of dynamic diffraction in inhomogeneous crystals
000E05 (1999) Crosstalk investigations in HgCdTe staring focal plane arrays
000E63 (1998-06-10) Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots

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