MO method < MOCVD < MOCVD coatings

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 42.
[0-20] [0 - 20][0 - 42][20-40]

Ident.	Authors (with country if any)	Title
000005 (2013)		Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD
000061 (2011)		Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000108 (2010)		Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures
000189 (2008)		Quantum dot photonics : edge emitter, amplifier and VCSEL
000204 (2008)		Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD
000212 (2008)		Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
000224 (2007)		The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
000264 (2007)		Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
000333 (2005)		Voltage-capacitance and admittance investigations of electron states in self-organized InAs/GaAs quantum dots
000368 (2005)		Long wavelength VCSEL devices on GaAs substrates
000387 (2005)		Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
000404 (2004-05)		MOCVD Growth and Mg-Doping of InAs Layers
000410 (2004-04)		Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
000440 (2004)		Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain
000498 (2003-12-08)		Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
000500 (2003-12)		MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm
000575 (2003-02)		Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55 μm) InGaAsP/InP Laser Diodes
000585 (2003-01-25)		An Overview of TPV Cell Technologies
000688 (2003)		Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000689 (2003)		Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm
000721 (2002-09)		MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact

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