Light emitting diode < Light emitting diodes < Light interference

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List of bibliographic references

Number of relevant bibliographic references: 47.
[0-20] [0 - 20][0 - 47][20-40]

Ident.	Authors (with country if any)	Title
000115 (2010)		InGaAsSb LED arrays (λ = 3.7 μm) with Photonic Crystals
000152 (2009)		InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
000199 (2008)		Modification of anode surface in organic light-emitting diodes by chalcogenes
000212 (2008)		Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
000224 (2007)		The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
000232 (2007)		Quantum-dot superluminescent diodes with improved performance
000312 (2006)		Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000481 (2004)		Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity
000482 (2004)		Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
000523 (2003-09)		Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells
000532 (2003-08)		Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000638 (2003)		Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000730 (2002-08)		Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000735 (2002-07)		Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors
000752 (2002-04-22)		Optical switching in midinfrared light-emitting diodes
000756 (2002-04-15)		Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing
000782 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000829 (2002)		High-power mid-infrared light emitting diodes grown by MOVPE
000858 (2001-12-17)		Current crowding in InAsSb light-emitting diodes
000879 (2001-09)		InAs/InAsSbP Light-Emitting Structures Grown by Gas-Phase Epitaxy
000902 (2001-05)		Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)

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