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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Lead sulfides < Lead tellurides < Lead zirconates  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]
Ident.Authors (with country if any)Title
000142 (2009) Photoconductivity of oxidized nanostructured PbTe(In) films
000231 (2007) Raman spectroscopy of Pb0.75Sn0.25Te(In) single crystal
000592 (2003) Vapor growth of Pb1-xInxTe crystals
000604 (2003) Specific heat, magnetic susceptibility and resistivity of In-doped Sn0.8Pb0.2Te
000629 (2003) Multiphonon emission process on DX-like centers in indium doped Pb0.75Sn0.25Te
000664 (2003) Growth of in-doped PbTe films on Si substrates
000687 (2003) Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique
000799 (2002) Pb and In codeposition in the vacuum growth of PbTe(In) films on Si substrates
000804 (2002) On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities
000A02 (2001) Effect of low-temperature diffusion annealing on the properties of PbSnTe(In) epilayers
000A15 (2001) A new method for growing thin layers of solid solutions between IV-VI compounds
000B97 (2000) Dopant distribution in crystals of PbTe-based solid solutions
000E00 (1999) Effect of annealing on the real structure of doped PbTe crystals
000F12 (1998) Vapor-liquid-solid growth of Pb1-xInxTe crystals
000F26 (1998) Point defect clusters in Pb1-xInxTe single crystals revealed by X-ray diffuse scattering method
001067 (1997) Vibrational spectroscopy of indium-doped Pb0.9Mn0.1Te alloy
001080 (1997) Synthesis of in-doped PbTe crystals
001119 (1997) Far-infrared spectroscopy of localized states in indium doped PbTe and Pb1-xAxTe (Ax = Mn0.017; Sn0.18) alloys
001167 (1996-08) Characteristic features of the magnetoresistance of Pb1-xSnxTe(In) and Pb1-xMnxTe(In) alloys in ultrastrong magnetic fields
001173 (1996-07) Influence of quasilocal states of In on defect formation in PbTe
001189 (1996-05) Identification of one- and two-electron impurity centers in semiconductors by Mössbauer spectroscopy

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