Irreversible processes < Island structure < Isobutane

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]

Ident.	Authors (with country if any)	Title
000001 (2014)		Tailoring the Indium island sizes on the Silicon surface by controlling the deposition rate. Interplay between the size selectivity due to the quantum confinement effect and kinetic factors
000326 (2006)		Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000526 (2003-08)		Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100)
000653 (2003)		InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy
000668 (2003)		Formation specifity of InAs/GaAs submonolayer superlattice
000759 (2002-03-25)		Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000805 (2002)		Observations of self-organized InAs nanoislands on GaAs (0 0 1) surface by electrostatic force microscopy
000945 (2001)		Reversibility of the island shape, volume and density in Stranski-Krastanow growth
000964 (2001)		Optical and structural properties of self-organized InGaAsN/GaAs nanostructures
000983 (2001)		Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000996 (2001)		Entropy-driven effects in self-organized formation of quantum dots
000A40 (2000-11)		Atomic Structures of Two-Dimensional Strained InAs Epitaxial Layers on a GaAs(001) Surface: in situ Observation of Quantum Dot Growth
000B17 (2000-02)		Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
000B48 (2000)		Quantum dots formed by ultrathin insertions in wide-gap matrices
000C56 (1999-09)		Heteroepitaxial growth of InAs on Si: a new type of quantum dot
000C65 (1999-08)		Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
000C69 (1999-08)		Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
000C74 (1999-07)		Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host
000D09 (1999-04)		Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
000D80 (1999)		Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots
000E58 (1998-07)		Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C

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