Ion emission < Ion implantation < Ion mobility

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List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]

Ident.	Authors (with country if any)	Title
000040 (2012)		Magnetic properties of Co implanted TlInS2 and TlGaSe2 crystals
000306 (2006)		Nonlinear optical properties of copper nanoparticles synthesized in indium tin oxide matrix by ion implantation
000394 (2005)		384x288 MCT LWIR FPA
000957 (2001)		Photoelectric properties of single-crystal InSb implanted with Mg ions
000A20 (2001)		'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53-1.55 μm) laser diodes
000F79 (1997-12)		Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates
001117 (1997)		Formation of n+-layers in undoped and indium-doped GaAs wafers by Si and Si+P ion implantation
001306 (1995-07)		Effect of Ar+ implantation on light scattering by undoped indium phosphide single crystals
001365 (1995)		New investigation of III-V compounds by the low-angle mid-IR light-scattering technique
001446 (1994-03)		Redistribution of beryllium in InSb and InAs resulting from ion implantation and subsequent annealing
001508 (1993)		The effect of ion implantation processes on the characteristics of thermal wave signals from semiconductor materials in the mirage-effect' geometry
001558 (1993)		Ion implantation of a donor impurity in indium phosphide
001600 (1992)		Thermal wave measurement of ion implanted semiconductors in the mirage effect geometry
001626 (1992)		Redistribution of magnesium in InAs during postimplantation annealing
001633 (1992)		Picosecond carrier dynamics and studies of Auger recombination processes in indium arsenide at room temperature
001697 (1992)		Distributions of the concentrations of shallow and deep charged centers in the indium phosphide layers doped by implantation of beryllium ions
001743 (1991)		Some effects influencing the distribution profiles of implanted ions in crystalline semiconductor III-V targets after ion implantation
001750 (1991)		Raman light scattering investigation of structural disorder of InP single crystals implanted with Be+ions
001783 (1991)		Localization of carbon, nitrogen, and oxygen atoms implanted in the lattices of III-V binary semiconductor crystals
001927 (1990)		Diode n-p CuInSe2 structures fabricated by oxygen implantation
001966 (1989)		Investigation of traps in InP:Zn single crystals implanted by phosphorus ions

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