Serveur d'exploration sur l'Indium - Analysis (Russie)

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List of bibliographic references

Number of relevant bibliographic references: 64.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000011 (2013) TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
000023 (2013) Electronic properties of a single heterojunction in InSb/InAs quantum dot system
000030 (2012) Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000031 (2012) Structure of ordered oxide on InAs(100) surface
000055 (2011) Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
000064 (2011) Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching
000122 (2010) Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces
000123 (2010) Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface
000125 (2010) Chemical analysis of a sulfur-treated InSb(111)A surface by XPS
000150 (2009) InSb quantum dots and quantum rings on InAs-rich surface
000151 (2009) InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000156 (2009) High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000161 (2009) Etching and oxidation of InAs in planar inductively coupled plasma
000167 (2009) Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment
000171 (2009) Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing
000185 (2008) The Ag2S-In2S3-Si(Ge)S2 systems and crystal structure of quaternary sulfides Ag2In2Si(Ge)S6
000224 (2007) The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
000226 (2007) Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix
000249 (2007) High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure
000251 (2007) Growth and defects of GaAs and InGaAs films on porous GaAs substrates
000267 (2007) Charge accumulation in ultrathin Cs/n-GaN and Cs/n-InGaN interfaces

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