Injection current < Injection laser < Inorganic adsorbate

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List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000367 (2005)		Long-wavelength lasers based on metamorphic quantum dots
000979 (2001)		Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping
000988 (2001)		Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers
000C12 (2000)		0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
000D50 (1999)		Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing
000D73 (1999)		Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers
000F41 (1998)		Interface-induced phenomena in type II antimonide-arsenide heterostructures
000F54 (1998)		Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
001068 (1997)		Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency
001082 (1997)		Sulfur passivation of InGaAs/AlGaAs SQW laser (977 nm) facets in alcohol-based solutions
001095 (1997)		Radiation characteristics of injection lasers based on vertically coupled quantum dots
001102 (1997)		Negative characteristic temperature of InGaAs quantum dot injection laser
001553 (1993)		Long-wavelength low-threshold lasers based on III-V compounds
001566 (1993)		High-power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes
001608 (1992)		Study of static properties of a 1.3 μm range optical amplifier
001676 (1992)		High-power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process
001805 (1991)		Improvement in the burial process and fabrication of single-mode buried InGaAsP/InP (λ = 1.3 μm) lasers with an output power of 160 mW
001807 (1991)		High-power 0.8 μm InGaAsP-GaAs SCH SQW lasers
001816 (1991)		Experimental and theoretical investigations of singularities of the thresholdand power characteristics of InGaAsP/InP separate-confinement double-heterostructure lasers (λ = 1.3 μm)
001971 (1989)		High-power (1W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (λ=O•8μm) separate-confinement single-quantum-well broad-area lasers
001B73 (1988)

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