Serveur d'exploration sur l'Indium - Analysis (Russie)

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Infrared photodiodes < Infrared radiation < Infrared reflection  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]
Ident.Authors (with country if any)Title
000098 (2010) Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation : PHOTONICS AND NANOTECHNOLOGY
000191 (2008) Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000234 (2007) Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer
000384 (2005) Diagnostics of ortho and para water isomers with tunable diode lasers
000443 (2004) The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing
000492 (2004) Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply
000671 (2003) Fanning scattering in LiNbO3 at 750-850 nm induced by femtosecond laser pulses
000962 (2001) Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
000D85 (1999) InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
000F21 (1998) Single-frequency λ = 1.06 μm semiconductor laser with a distributed Bragg mirror in an optical fibre
000F22 (1998) Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate
000F63 (1998) Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures
001109 (1997) LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas
001123 (1997) Effects of irradiation on GaAlAs-GaAs and InGaAsP-InP lasers
001179 (1996-06) Focal arrays based on HgCdTe photodiodes for the 3-5- and 8-12-μm spectral regions
001245 (1996) Investigation of the mode structure of InAsSb/InAsSbP lasers with respect to spectroscopic applications
001274 (1995-12) Infrared array photodetectors for the 8-20-μm range, based on superphotosensitive films of a solid solution
001306 (1995-07) Effect of Ar+ implantation on light scattering by undoped indium phosphide single crystals
001312 (1995-06) Measurement of the energy of interface donor centers in a GaSb/InAs/GaSb quantum well
001328 (1995-03) Visualization of large-scale clusters of electrically active defects in indium phosphide and gallium arsenide single crystals
001332 (1995-02) Strained thin-layer InAs1-x-ySbxBiy/InSb heterostructures: calculation of certain physical properties

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