Infrared imaging < Infrared laser < Infrared photodiodes

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List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
000157 (2009)		High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000203 (2008)		Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
000342 (2005)		Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers
000608 (2003)		SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100%
000636 (2003)		MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000654 (2003)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
000816 (2002)		Long-wavelength quantum-dot lasers
000856 (2002)		1.3 Micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates
000946 (2001)		Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
000985 (2001)		InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range
000991 (2001)		Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
000A18 (2001)		1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
000A19 (2001)		1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis : Special issue papers
000A20 (2001)		'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53-1.55 μm) laser diodes
000B32 (2000)		Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode
000B57 (2000)		Optical loss in strained quantum-well semiconductor ridge lasers
000B80 (2000)		InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers
000B87 (2000)		Gaas-based 1.3 μm InGaAs quantum dot lasers : A status report : Special issue papers
000B90 (2000)		Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers
000D54 (1999)		Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
000D61 (1999)		Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction

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