Serveur d'exploration sur l'Indium - Analysis (Russie)

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Indium phosphide < Indium phosphides < Indium selenides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 140.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000242 (2007) Limiting efficiencies of second-harmonic generation and cascaded X(2) processes in quadratically nonlinear photonic nanowires
000269 (2007) Characterization of InP porous layer by high-resolution X-ray diffraction
000282 (2006) Structure of InP single crystals irradiated with reactor neutrons
000290 (2006) Simulations of light -current and spectral characteristics of InGaAlAs/InP semiconductor lasers
000327 (2006) Chemically prepared well-ordered InP(001) surfaces
000330 (2006) 3D unsteady analysis of gas turbulent convection during HPLEC InP growth
000337 (2005) Temperature behavior of hot carrier dynamics in InP quantum dots
000365 (2005) MnGeP2 thin films grown by molecular beam epitaxy
000385 (2005) Coupled phonon-plasmon modes in indium phosphide observed by an ultrafast pump-probe technique
000449 (2004) Semiconductor Bridgman growth inside inertial flight mode orbiting systems of low orbital eccentricity and long orbital period
000450 (2004) Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure
000453 (2004) Quantum beats in semiconductor quantum dots
000459 (2004) Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures
000480 (2004) Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well
000486 (2004) Effect of crystal defects on the electrical behaviour of InP and sige epitaxial structures
000602 (2003) Structural perfection of four-layer GaxIn1-xAsyP1-y laser heterostructures
000608 (2003) SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100%
000611 (2003) Recent advances in long wavelength GaAs-based quantum dot lasers
000630 (2003) Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals
000649 (2003) InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth
000650 (2003) InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

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