Serveur d'exploration sur l'Indium - Analysis (Russie)

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List of bibliographic references

Number of relevant bibliographic references: 140.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000B82 (2000) High-pressure synthesis of metastable ternary solid solutions between tetrahedral semiconductors
000D49 (1999) Surface properties of indium pnictides
000D85 (1999) InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
000F45 (1998) InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range
000F48 (1998) GaSb based PV cells with Zn-diffused emitters
000F51 (1998) Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
000F54 (1998) Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
001077 (1997) The anomalous temperature dependence of the heat capacity of molten InSb in the vicinity of the melting temperature
001239 (1996) New low-temperature thermistors InSb:Mn for nuclear cryogenic detectors
001397 (1995) Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
001506 (1993) The increase of the binding probability of free electron and hole into Wannier-Mott exciton in a strong magnetic field
001528 (1993) Preferential sputtering of the InSb and InP single crystals
001534 (1993) Photomagnetic effect in n-type InSb subjected to strong electric and quantizing magnetic fields
001546 (1993) Mechanisms of dislocation motion and multiplication in ionic and semiconductor crystals
001549 (1993) Magnetophotoluminescence of MBE-grown InSb and InAs
001579 (1993) Dynamics of dislocations in InSb and GaAs crystals
001603 (1992) The conductivity anisotropy in uniaxially stressed p-InSb
001610 (1992) Studies of Mandelstamm-Brillouin light scattered by the surface of (111)-, (110)-cutted GaAs, and (111)-cutted InSb crystals
001630 (1992) Pressure and temperature dependences of the thermal conductivity of gallium and indium antimonides and their solid solutions
001632 (1992) Polarization dependences of two-photon absorption in narrow-gap InSb and HgCdTe type semiconductors
001651 (1992) Metal-insulator transition in heavily doped indium antimonide subjected to a magnetic field

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