Serveur d'exploration sur l'Indium - Analysis (Russie)

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Heterointerface < Heterojunction < Heterojunction transistor  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 107.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000117 (2010) Fluorine doped indium oxide films for silicon solar cells
000126 (2010) Band structure at heterojunction interfaces of GaInP solar cells
000194 (2008) Numerical modelling of GaInP solar cells with AlInP and AlGaAs windows
000196 (2008) New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements
000247 (2007) ITO deposited by pyrosol for photovoltaic applications
000300 (2006) Photovoltaic properties and technological aspects of In1-xGaxN/Si, Ge (0
000B83 (2000) High quantum efficiency diode photodetector based on ultra-thin InGaAs-on-Si films
001131 (1997) Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas
001134 (1997) A new approach to the cap layer thinning of GaAs based heterostructures with near surface quantum wells
001269 (1996) A3B5 based solar cells and concentrating optical elements for space PV modules
001343 (1995) The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
001375 (1995) Injection-contact phenomena in sub-micron layers of disordered zinc selenide
001397 (1995) Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
001501 (1993) Tunnel effect as the cause of the current limited by contact emission in an In2O3-ZnSe-(Zn1-xCdxTe)1-y(In2Te3)y-In heterostructure
001512 (1993) Superluminescent diodes for visible (670 nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorber
001518 (1993) Semiclassical theory of interband tunnelling in semiconductor heterostructures
001522 (1993) Radiation recombination in type-II n-GaInAsSb/N-GaSb heterojunctions
001523 (1993) Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001529 (1993) Potosensitivity of n-Cd0.8Zn0.2S-p-CulnSe2 heterojunctions
001536 (1993) Photoelectric properties of n-CdS:In-p-CuInSe2 heterojunctions
001561 (1993) Inversion of the conduction in a zinc-selenide layer of an In2O3-ZnSE-(Zn1-xCdxTe)1-y(In2Te3)y-In heterostructure

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