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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Growth mechanism »
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Growth interface < Growth mechanism < Growth rate  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]
Ident.Authors (with country if any)Title
000005 (2013) Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD
000013 (2013) Readsorption Assisted Growth of InAs/InSb Heterostructured Nanowire Arrays
000015 (2013) Pd nanoparticles on SnO2(Sb) whiskers: Aggregation and reactivity in CO detection
000061 (2011) Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000065 (2011) Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
000074 (2011) MOVPE of device-oriented wide-band-gap III-N heterostructures
000080 (2011) High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy
000107 (2010) Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures
000108 (2010) Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures
000114 (2010) Influence of ex-situ AFM treatment on epitaxial growth of self-organized InAs quantum dots
000201 (2008) MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
000204 (2008) Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD
000226 (2007) Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix
000233 (2007) Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000239 (2007) Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®
000241 (2007) MBE-grown metamorphic lasers for applications at telecom wavelengths
000246 (2007) InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
000248 (2007) High-density InSb-based quantum dots emitting in the mid-infrared
000250 (2007) Growth of InN films and nanorods by H-MOVPE
000251 (2007) Growth and defects of GaAs and InGaAs films on porous GaAs substrates
000264 (2007) Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

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