Ground state < Ground states < Group IIB metal Compounds

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List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]

Ident.	Authors (with country if any)	Title
000010 (2013)		The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
000326 (2006)		Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000355 (2005)		Optical spin polarization in double charged InAs self-assembled quantum dots
000410 (2004-04)		Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
000431 (2004-01-05)		Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
000443 (2004)		The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing
000707 (2002-11-15)		Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
000713 (2002-10-15)		Quantum dot origin of luminescence in InGaN-GaN structures
000833 (2002)		Electron spin redistribution due to Pauli blocking in quantum dots and quantum wells
000867 (2001-10-15)		Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature
000885 (2001-08-15)		Strain engineering of self-organized InAs quantum dots
000A21 (2000-12-15)		Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000A23 (2000-12-15)		Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
000A67 (2000-06-26)		Stark shift in electroluminescence of individual InAs quantum dots
000B26 (2000-01-03)		Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation
000C45 (1999-09-27)		Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
000C58 (1999-09)		Gain characteristics of quantum-dot injection lasers
000C66 (1999-08)		Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures
000C87 (1999-06)		Peculiarities of crystal field effects in CeInCu2 based heavy-fermion compounds
000C98 (1999-05)		Electron spin beats in InGaAs/GaAs quantum dots
000D39 (1999-01)		Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions

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