Gallium phosphide < Gallium phosphides < Gallium selenides

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List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]

Ident.	Authors (with country if any)	Title
000450 (2004)		Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure
000602 (2003)		Structural perfection of four-layer GaxIn1-xAsyP1-y laser heterostructures
000608 (2003)		SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100%
000649 (2003)		InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth
000650 (2003)		InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
000699 (2003)		14XX nm pump lasers for Raman and Er3+ doped fiber amplifiers
000803 (2002)		On the theory of X-ray diffraction and X-ray standing waves in the multilayered crystal systems
000842 (2002)		Dislocation dipoles in nanoscale films with compositional inhomogeneities
000854 (2002)		AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers
000931 (2001)		Thermal expansion of gallium and indium phosphides: Thermodynamic evaluation
000A12 (2001)		Carrier relaxation dynamics in self-assembled quantum dots studied by artificial control of nonradiative losses
000A20 (2001)		'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53-1.55 μm) laser diodes
000B33 (2000)		Threshold characteristics of InGaAsP/InP multiple quantum well lasers
000B42 (2000)		Statistical features of degradation of heterojunction lasers during aging and upon irradiation
000D54 (1999)		Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
000F22 (1998)		Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate
000F32 (1998)		Observation of a martensitic transition in the Raman spectra of spontaneously ordered GaInP alloys
001109 (1997)		LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas
001123 (1997)		Effects of irradiation on GaAlAs-GaAs and InGaAsP-InP lasers
001129 (1997)		Collective superradiation effects in InGaAsP/InP liquid phase epitaxy-grown quasi-0-dimentional nanostructures
001157 (1996-09)		Optical and luminescence properties of stressed layers with quantum wells in GaInAsP/InP heterostructures grown by MOS hydride epitaxy

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