Gallium nitride < Gallium nitrides < Gallium oxide

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 58.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000224 (2007)		The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
000230 (2007)		Recent developments in the III-nitride materials
000233 (2007)		Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000239 (2007)		Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®
000246 (2007)		InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
000264 (2007)		Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
000267 (2007)		Charge accumulation in ultrathin Cs/n-GaN and Cs/n-InGaN interfaces
000275 (2007)		Analysis of the local indium composition in ultrathin InGaN layers
000294 (2006)		Role of fluctuations in carrier transfer in semiconductor heterostructures
000295 (2006)		Resonant Raman scattering in InGaN alloys
000329 (2006)		Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers
000349 (2005)		Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000360 (2005)		Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure
000387 (2005)		Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
000393 (2005)		A gauge invariant approach to the raman scattering in heavily doped crystals
000474 (2004)		High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy
000482 (2004)		Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
000612 (2003)		Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
000613 (2003)		Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys
000619 (2003)		Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000651 (2003)		InGaAsN/GaAs QD and QW structures grown by MOVPE

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Gallium nitrides" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Gallium nitrides" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Gallium nitrides
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024