Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Gallium arsenides »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Gallium antimonides < Gallium arsenides < Gallium base alloys  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 729.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000005 (2013) Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD
000010 (2013) The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
000017 (2013) Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals
000021 (2013) Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
000030 (2012) Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000036 (2012) Pecularities of Hall effect in GaAs/δ?Mn?/GaAs/InxGa1-xAs/ GaAs (x ≃ 0.2) heterostructures with high Mn content
000047 (2012) Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier
000048 (2012) Effects of p-type doping on the optical properties of InAs/GaAs quantum dots
000055 (2011) Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
000062 (2011) Resonance Coulomb scattering by shallow donor impurities in GaAs and InP
000075 (2011) Intraband spectroscopy of excited quantum dot levels by measuring photoinduced currents
000084 (2011) Circularly polarized basic photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ-layer in the barrier
000094 (2010) Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis
000108 (2010) Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures
000118 (2010) Effects of the local field and inherent deformation in reflectance anisotropy spectra of AIIIBV semiconductor surfaces
000134 (2009) Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized source
000154 (2009) III-phosphides heterojunction solar cell interface properties from admittance spectroscopy
000163 (2009) Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes
000164 (2009) Effect of impurity potential range on a scaling behavior in the quantum Hall regime
000169 (2009) Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots
000172 (2009) Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn 6-layer

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Gallium arsenides" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Gallium arsenides" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Gallium arsenides
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024