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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Gallium Phosphides »
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Gallium Oxides < Gallium Phosphides < Gallium Scandium Yttrium Oxides Mixed  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]
Ident.Authors (with country if any)Title
000034 (2012) Plasmonic modulator based on gain-assisted metal-semiconductor-metal waveguide
000128 (2010) Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity
000149 (2009) Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
000173 (2009) Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique
000208 (2008) Frequency tuning of diode laser radiation by surface acoustic wave
000211 (2008) Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices
000D91 (1999) High - brightness LEDs as alternative to lasers and traditional illuminants
001131 (1997) Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas
001339 (1995) Wavelength and polarisation switching in InGaAsP/InP DFB lasers
001343 (1995) The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
001387 (1995) Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
001527 (1993) Profiles of isotopes in III-V semiconductor compounds formed as a result of bombardment with high-energy α particles
001582 (1993) Crystallization of overcooled A3B5 compounds
001740 (1991) Structure of the wave functions of impurity centers of transition elements in III-V compounds
001743 (1991) Some effects influencing the distribution profiles of implanted ions in crystalline semiconductor III-V targets after ion implantation
001774 (1991) Mechanisms of the influence of hydrogen on the electrical and photoelectric properties of Pd-p(n)-InP and Pd-n-GaP diode structures
001912 (1990) Investigation of isovalent impurity states in GaP using the extended-Hückel and the Mulliken-Wolfsberg-Helmholtz method
001B29 (1988)
001B39 (1988)
001C58 (1987)
001C70 (1987)

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