Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Gallium Indium Arsenides Mixed »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Gallium Indium Antimonides phosphides Mixed < Gallium Indium Arsenides Mixed < Gallium Indium Arsenides Phosphides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 75.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000036 (2012) Pecularities of Hall effect in GaAs/δ?Mn?/GaAs/InxGa1-xAs/ GaAs (x ≃ 0.2) heterostructures with high Mn content
000054 (2011) Tunnel injection emitter structures with barriers comprising nanobridges
000078 (2011) Hot electron transport in heterostructures
000084 (2011) Circularly polarized basic photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ-layer in the barrier
000107 (2010) Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures
000134 (2009) Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized source
000153 (2009) Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures
000164 (2009) Effect of impurity potential range on a scaling behavior in the quantum Hall regime
000172 (2009) Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn 6-layer
000186 (2008) Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells
000210 (2008) Emission properties of InGaAs/GaAs heterostructures with δ-doped barrier
001495 (1994) Correlation effects in magnetoluminescence spectra from dense quasi-2D electron gas in selectively doped InGaAs/GaAs quantum wells
001564 (1993) InGaP/GaAs/InGaAs quantum well lasers prepared by atmospheric pressure metalorganic chemical vapour deposition
001605 (1992) Temperature dependence of the binding energy of Wannier-Mott excitons in quantum wells
001634 (1992) Picosecond GaAs and InGaAs photoconductive switches obtained by low-temperature metal-organic chemical vapour deposition
001636 (1992) Photoelectron phenomena in GaAs layers with a built-in surface quantum heterowell
001648 (1992) Model and principles of formation of the structure of a (Ga, In)As solid solution
001655 (1992) Magnetoluminescence study of many-body effects in a dense electron-hole plasma of strained InxGa1-xAs/GaAs quantum wells
001667 (1992) Intersubband absorption of infrared radiation in stressed quantum-well InxGa1-xAs-GaAs structures
001670 (1992) Influence of the surface electric field on carrier transfert into InGaAs/GaAs single quantum wells
001677 (1992) Gunn diodes made of n-InGaAs/n+InP heterostructures

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Gallium Indium Arsenides Mixed" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Gallium Indium Arsenides Mixed" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Gallium Indium Arsenides Mixed
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024