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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Gallium Indium Antimonides arsenides < Gallium Indium Antimonides arsenides Mixed < Gallium Indium Antimonides phosphides Mixed  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
001522 (1993) Radiation recombination in type-II n-GaInAsSb/N-GaSb heterojunctions
001548 (1993) Mechanism of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb
001553 (1993) Long-wavelength low-threshold lasers based on III-V compounds
001647 (1992) Nature of the long-wavelength shift of the spectrum of coherent radiation emitted from GalnAsSb heterolasers
001757 (1991) Polarization of the luminescence emitted from the surface of III-V heterostructure with a profiled substrate
001773 (1991) Melt-solid phase equilibria in the Pb-GaAs-GaSb system
001787 (1991) Investigation of the temperature dependence of the threshold current density of double-heterostructure GaInAsSb lasers
001825 (1991) Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions
001847 (1991) Behavior of ytterbium in epitaxial p-type GalnSbAs films
001848 (1991) Behavior of impurities of p-type GaInSbAs solid solutions
001850 (1991) Avalanche multiplication and ionization coefficients of GalnAsSb
001885 (1990) Residual deformation in epitaxial layers of InGaAsSb, InAsSbP, and InAsSb on an InAs substrate
001896 (1990) Original spontaneous electroluminescence generated in GaInAsSb heterojunction light-emitting diodes in the spectral range 1.8-2.4 μm
001A30 (1989)
001A35 (1989)
001A37 (1989)
001B56 (1988)
001B73 (1988)

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