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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Fermi level »
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Fermi gas model < Fermi level < Fermi liquid  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 46.
[0-20] [0 - 20][0 - 46][20-40]
Ident.Authors (with country if any)Title
000103 (2010) On the electronic origin of the inverse magnetocaloric effect in Ni-Co-Mn-In Heusler alloys
000123 (2010) Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface
000137 (2009) Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
000344 (2005) SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers
000432 (2004-01) Strongly Compensated InAs Obtained by Proton Irradiation
000480 (2004) Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well
000560 (2003-04) Electrical Properties of InAs Irradiated with Protons
000728 (2002-08-01) Thermoelectric efficiency in graded indium-doped PbTe crystals
000804 (2002) On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities
000863 (2001-11-15) Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures
000C23 (1999-12) Position of the Fermi level on an indium arsenide surface treated in sulfur vapor
000C31 (1999-11) Radiation defects in semiconductors under hydrostatic pressure
000C86 (1999-06) Properties of positron annihilation in metals
000C91 (1999-05-15) Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states
000C99 (1999-05) Chemical effects during formation of the electronic surface structure of III-V semiconductors in a sulfide solution.
000D03 (1999-04) Surface of n-type InP (100) passivated in sulfide solutions
000F87 (1997-11) Influence of donor-donor interaction on the metal-insulator transition in doped semiconductors
001209 (1996-02) Change in the electronic work function of sulfide-passivated III-V semiconductor surfaces
001231 (1996) Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel
001281 (1995-10-25) Quasithreshold character of the far-infrared absorption in GaSb/InAs/GaSb quantum wells
001310 (1995-06-15) Interaction of above-Fermi-edge magnetoexciton states from different subbands in dense two-dimensional electron magnetoplasma

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