Experimental study < Experiments < Explosions

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List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000638 (2003)		Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000781 (2002)		Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000782 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000787 (2002)		Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy
000791 (2002)		Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000800 (2002)		Optical properties and defects in GaAsN and InGaAsN films and quantum well structures
000819 (2002)		Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions
000824 (2002)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
000829 (2002)		High-power mid-infrared light emitting diodes grown by MOVPE
000928 (2001)		X-ray optical scheme for diffraction study of semiconductor quantum wells and quantum dots
000972 (2001)		Mechanism of O3 and NO2 detection and selectivity of In2O 3 sensors
000973 (2001)		Mathematical simulation and experimental study of semiconductor quaternary solid solutions of substitution of the In1-xGaxP 1-yAsy system
000A11 (2001)		Cathodoluminescence of indium phosphide single crystal of n-type conductivity
000C09 (2000)		8 W continuous wave operation of InGaAsN lasers at 1.3 μm
000D53 (1999)		Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser
000D89 (1999)		High power CW operation of InGaAsN lasers at 1.3 μm
000E07 (1999)		Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
001230 (1996)		Self-consistent calculation of current-voltage characteristics of resonant tunnelling structures with type II heterojunctions
001237 (1996)		Peculiarities of the initial stage of Zn diffusion into InP from polymer spin-on films
001247 (1996)		Interface electroluminescence of confined carriers in type II broken-gap p-Ga-In-AsSb/p-InAs single heterojunction
001359 (1995)		Properties of the surface of HgCdTe crystals with passivating indium sulfide layers

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