Excited states < Exciton < Exciton defect interaction

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List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]

Ident.	Authors (with country if any)	Title
001549 (1993)		Magnetophotoluminescence of MBE-grown InSb and InAs
001635 (1992)		Photoluminescence of an epitaxial InSb film on a quasiinsulating p-type InSb substrate
001652 (1992)		Manifestation of H-centre aggregation in the exciton-induced thermostimulated luminescence of KBr:In and KBr:Tl crystals
001655 (1992)		Magnetoluminescence study of many-body effects in a dense electron-hole plasma of strained InxGa1-xAs/GaAs quantum wells
001658 (1992)		Luminescence and Raman scattering of light in some I-III-VI2 crystals and their solid solutions
001684 (1992)		Excitons in dense two-dimensional electron-hole magnetoplasmas
001686 (1992)		Exciton structure of the fundamental absorption edge of CuInSe2
001696 (1992)		Effects of the interaction of intrasubband and intersubband magnetoplasmons in the emission spectrum of a quasi-2D electron gas
001751 (1991)		Quasi-Landau oscillations in the magnetoabsorption of Rydberg exciton states of InP in intermediate magnetic fields
001793 (1991)		Interband photoconductivity in layer semiconductor GaSe, InSe and GaS
001817 (1991)		Excitons and deexcitons in a neutral 2D magnetoplasma with an integer filling of Landau levels : experiment and theory
001818 (1991)		Excitonic insulator in a magnetized quasi-2D plasma
001819 (1991)		Excitonic effects in low density electron-hole plasma in InGaAs/InP quantum wells under magnetic field
001820 (1991)		Exciton states in doped InSe and GaSe single crystals
001824 (1991)		Electron confinement due to reflection from the interface in heterojunctions
001829 (1991)		Effect of doping on exciton states in InSe and GaSe lamellar semiconductors
001845 (1991)		Calculation of the exciton parameters in stressed quantum-well InxGa1-xAs/GaAs structures
001902 (1990)		Mechanism of the influence of isovalent in impurities on the properties and ensemble of defects in GaAs grown by the molecular beam epitaxy method
001915 (1990)		Influence of fast-electron irradiation on the edge photoluminescence of epitaxial n-type InP films
001921 (1990)		Field quenching of the exciton photoconductivity of single crystals
001923 (1990)		Enhancement of multiphonon resonant Raman scattering of light in the case of equal effective masses of an electron and a hole

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