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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Electron microscopy < Electron mobility < Electron nuclear double resonance  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]
Ident.Authors (with country if any)Title
000047 (2012) Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier
000078 (2011) Hot electron transport in heterostructures
000083 (2011) Curvature-tuned InAs-based shells containing two-dimensional electron gas
000102 (2010) Optimization of Optical Orientation and Electron Spin Transport in AlInGaAs/AlGaAs Superlattice
000135 (2009) Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ
000137 (2009) Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
000162 (2009) Electronic structure of BN nanotubes with intrinsic defects NB and BN and isoelectronic substitutional impurities PN, ASN, SbN, InB, GaB, and AlB
000197 (2008) Molecular Doping of Graphene
000211 (2008) Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices
000255 (2007) Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
000300 (2006) Photovoltaic properties and technological aspects of In1-xGaxN/Si, Ge (0
000397 (2004-06-07) Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000414 (2004-03-29) Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
000521 (2003-09) Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000718 (2002-09) Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers
000A56 (2000-07-15) Decrease of channel conductivity with increasing sheet electron concentration in modulation-doped heterostructures
000B05 (2000-03-20) Hole and electron emission from InAs quantum dots
000B20 (2000-02) Parametric Interaction of Space-Charge Waves in Thin-Film Semiconductor Structures
000B21 (2000-02) Magnetotransport in a Semimetal Channel in p-Ga1 - xInxAsySb1 - y / p-InAs Heterostructures with Various Compositions of the Solid Solution
000C91 (1999-05-15) Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states
000E32 (1998-10) High-electron-mobility field-effect transistors based on metamorphic InAlAs/InGaAs/InAlAs structures grown on GaAs substrates

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