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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Electron density »
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Electron delocalization < Electron density < Electron diffraction  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]
Ident.Authors (with country if any)Title
000047 (2012) Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier
000165 (2009) Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling
000397 (2004-06-07) Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000423 (2004-02) Structures Based on Cu(Ag)InnSm Semiconductor Compounds
000425 (2004-02) Observation of the Bose Condensation of Cooper Pairs in (Pb1 - xSnx)1 - zInzTe Semiconductor Solid Solutions
000516 (2003-10) Electronic Absorption of Surface Acoustic Waves by Quantum Rings in a Magnetic Field
000556 (2003-04) Quantum Hall Effect-Insulator Transition in the InAs / GaAs System with Quantum Dots
000728 (2002-08-01) Thermoelectric efficiency in graded indium-doped PbTe crystals
000802 (2002) Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation
000898 (2001-05-15) Radio-frequency response of semiconducting CdF2:In crystals with Schottky barriers
000967 (2001) Novel compounds Sn10In14P22I8 and Sn14In10P21.2I8 with clathrate I structure: Synthesis and crystal and electronic structure
000A56 (2000-07-15) Decrease of channel conductivity with increasing sheet electron concentration in modulation-doped heterostructures
000C62 (1999-08) Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
000C68 (1999-08) Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5μm
000C86 (1999-06) Properties of positron annihilation in metals
000D38 (1999-01) Quasi-gapless semiconductor: p-type indium arsenide
000E42 (1998-09) Physical properties of CuxAg1-xIn5S8 single crystals and related surface-barrier structures
000E44 (1998-09) Optical reflection in Pb0.78Sn0.22Te doped to 3 at.% with indium
001041 (1997-04) Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum wells
001046 (1997-04) Effect of pressure on the 2D carrier concentration in GaSb/InAs/GaSb quantum well system
001204 (1996-02-15) Weak antilocalization and spin precession in quantum wells

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