Electric charges < Electric conductivity < Electric contact

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List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]

Ident.	Authors (with country if any)	Title
000A11 (2001)		Cathodoluminescence of indium phosphide single crystal of n-type conductivity
001086 (1997)		Stoichiometry and properties of undoped indium oxide films prepared by reactive evaporation
001125 (1997)		Effect of intrinsic defects on hopping conduction in n- and p-type CuInSe2 crystals
001155 (1996-09)		Photodiodes based on InAs1-xSbx solid solutions for the spectral band in the range 3-5 μm
001176 (1996-06)		Optimum heterostructure parameters of a threshold avalanche photodiode with separate absorption and multiplication regions
001178 (1996-06)		High carrier mobility in p-type GaInAsSb/p-InAs heterostructures
001208 (1996-02)		Effect of In additions on the electrical properties of Sn0.8Ge0.2Te thin films obtained by laser sputtering
001213 (1996-01-08)		Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride
001250 (1996)		Electron mobility in selectively doped GaAs/InxGa1-xAs multiple quantum well structures
001252 (1996)		Electrical properties of conductive In2S3 and In2O3 films prepared from the In(S2COC3H7-iso)3 volatile precursor
001255 (1996)		Effect of oxygen stoichiometry on the structure and superconducting properties of Bi2Ba1.8M0.2CuO6+δ (M = Ba, In, Ru, Pb)
001264 (1996)		Autosolitons in electron-hole plasma of InSb heated by electric pulses
001266 (1996)		An investigation of the multicarrier transport properties of δ-doped InSb at high temperatures using a mobility spectrum technique
001276 (1995-11)		Superconducting and electrophysical properties of thin-films of Sn1-zGezTe:In solid solutions
001298 (1995-08)		Hopping conduction via highly localized impurity states of indium in Pb0.78Sn0.22Te solid solutions
001308 (1995-07)		Determination of the properties of the 2D electron gas in InGaAs/InP structures by acoustic methods under the conditions of the quantum Hall effect
001338 (1995-01)		Current-voltage characteristic of a heterostructure based on disordered zinc selenide
001360 (1995)		Properties of conducting In-S-O films, prepared from volatile complex compound
001378 (1995)		Gas-sensitive gap formation by laser ablation in In2O3 layer : application as humidity sensor
001392 (1995)		Curent transport processes in In2O3-ZnSe-(Zn1-xCdxTe)1-y(In2Te3)y heterostructures
001458 (1994-02)		Characteristics of the thermoelectric power of Bi2Te3 and InxBi2-xTe3 at pressures up to 20 GPa

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