Donor acceptor interaction < Donor center < Donors

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List of bibliographic references

Number of relevant bibliographic references: 45.
[0-20] [0 - 20][0 - 45][20-40]

Ident.	Authors (with country if any)	Title
000062 (2011)		Resonance Coulomb scattering by shallow donor impurities in GaAs and InP
000140 (2009)		Raman spectroscopy of Pb1-xSnxTe (In) single crystals
000179 (2009)		About deep impurity centers in InAs
000231 (2007)		Raman spectroscopy of Pb0.75Sn0.25Te(In) single crystal
000256 (2007)		Electron statistics and cluster formation in CdF2 semiconductors with DX-centers
000297 (2006)		Prolonged decay of free-to-bound photoluminescence in direct band gap InGaAs and AlGaAs alloys : magnetic resonance studies
000629 (2003)		Multiphonon emission process on DX-like centers in indium doped Pb0.75Sn0.25Te
000639 (2003)		Localized and resonant shallow donor states in GaAs/InGaAs double-quantum-well heterostructures
001526 (1993)		Properties of epitaxial indium arsenide doped with rare-earth elements
001563 (1993)		Influence of intercalation of Li and Ba on the electrical properties of InSe
001613 (1992)		Static and dynamic characteristics of the bulk and contact electrical resistance of CdCr2Se4 under conditions of stochastic instability of the current
001615 (1992)		Spectrum of shallow donor states in (GaAs)n(InAs)m superlattices
001666 (1992)		Investigation of structure defects in epitaxial indium arsenide films
001675 (1992)		Impurity states in In of GeTe
001826 (1991)		Electrical and photoelectric properties of InAsSbP solid solutions
001841 (1991)		Characteristics of liquid phase epitaxy and of electrophysical properties of epitaxial In0.53Ga0.47As:Sb films
001842 (1991)		Characteristics of compensation of the doping effect of donor impurities by vacancies in Pb0.93Sn0.07Se
001844 (1991)		Changes in the defect structure of CdxHg1-x Te as a result of doping with indium
001902 (1990)		Mechanism of the influence of isovalent in impurities on the properties and ensemble of defects in GaAs grown by the molecular beam epitaxy method
001952 (1989)		The charge state of hydrogen and hydrogen diffusion in InP and InGaAs
001970 (1989)		Hydrogen passivation of donors and acceptors in InP

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