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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Diode pumping < Diodes < Dipole approximation  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000510 (2003-11) 1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
000533 (2003-07-25) Heterolaser Frequency Tuning under the Action of Ultrasonic Waves
000575 (2003-02) Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55 μm) InGaAsP/InP Laser Diodes
000580 (2003-02) Charge Transport in Fe-p-InP Diode Structures
000617 (2003) Preparation and properties of Metal/CuInSe2 diode structures
000710 (2002-11) High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures
000711 (2002-11) Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux
000732 (2002-08) High-Power Low-Threshold Laser Diodes (λ = 0.94 μm) Based on MBE-Grown In0.1Ga0.9As/AlGaAs/GaAs Heterostructures
000750 (2002-05) Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures with Quantum Wells
000866 (2001-11) MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
000951 (2001) Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling
000A60 (2000-07) Properties of Wide-Mesastripe InGaAsP/InP Lasers
000A99 (2000-04) Mesastripe Single-Mode Separately Bounded Lasers Based on InGaAsP/InP Heterostructures Obtained by VPE of Organometallic Compounds
000B14 (2000-03) Influence of Humidity and Hydrogen on the Charge Transport in p-InP Diode Structures with a Palladium Contact
001221 (1996) The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD
001437 (1994-05-09) 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

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