Serveur d'exploration sur l'Indium - Analysis (Russie)

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List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]
Ident.Authors (with country if any)Title
000075 (2011) Intraband spectroscopy of excited quantum dot levels by measuring photoinduced currents
000409 (2004-04-15) Picosecond dynamics of bleaching and spin splitting in InP revealed by the photoinduced magneto-optical Kerr effect near the spin-orbit split-off exciton transition
000429 (2004-01-15) Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties
000432 (2004-01) Strongly Compensated InAs Obtained by Proton Irradiation
000512 (2003-10-15) Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot
000563 (2003-03-01) Injection cascade lasers with graded gap barriers
000605 (2003) Spatial mapping of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunnelling
000728 (2002-08-01) Thermoelectric efficiency in graded indium-doped PbTe crystals
000852 (2002) Autosolitons in electron-hole plasma in InSb under hydrostatic pressure
000865 (2001-11) On the Charge Transport Mechanism in n-InSb Films
000910 (2001-03-19) Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
000A69 (2000-06-15) Optical transitions in broken gap heterostructures
000C36 (1999-10-15) Evidence for electron-hole hybridization in cyclotron-resonance spectra of InAs/GaSb heterostructures
000C44 (1999-10) Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method
000C73 (1999-07-15) Excited states and selection rules in self-assembled InAs/GaAs quantum dots
000C87 (1999-06) Peculiarities of crystal field effects in CeInCu2 based heavy-fermion compounds
000C99 (1999-05) Chemical effects during formation of the electronic surface structure of III-V semiconductors in a sulfide solution.
000F94 (1997-10) Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures
001337 (1995-01) Insulator-metal phase transition: thermodynamic aspects of the problem
001430 (1994-07) Radiative recombination in heterostructure LEDs based on limiting-composition GaInAsSb
001559 (1993) Investigation of the structure of the conduction band of InAsSbP solid solutions

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