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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Concentration < Concentration distribution < Concentration effect  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000043 (2012) Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction
000107 (2010) Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures
000111 (2010) Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties
000613 (2003) Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys
000839 (2002) Disorder-induced exciton localization in 2D wide-gap semiconductor solid solutions
000D69 (1999) Optical properties of thin films and quantum wells of InxGa1-xN/GaN and their dependence on laser irradiation
001389 (1995) Determination of dopant concentration and the concentration profile in semiconductor electrodes
001475 (1994) Quantitative Auger analysis of A3B5 pseudobinary compounds by means of spectrum synthesis based on a non-linear least-squares fitting technique
001508 (1993) The effect of ion implantation processes on the characteristics of thermal wave signals from semiconductor materials in the mirage-effect' geometry
001513 (1993) Superconductivity and the distribution of the components in thin indium-doped PbzS1-zTe films
001527 (1993) Profiles of isotopes in III-V semiconductor compounds formed as a result of bombardment with high-energy α particles
001626 (1992) Redistribution of magnesium in InAs during postimplantation annealing
001649 (1992) Migration of indium in CdHgTe after application of magnetic field pulses
001743 (1991) Some effects influencing the distribution profiles of implanted ions in crystalline semiconductor III-V targets after ion implantation
001814 (1991) Ferroelectric properties of Pb1-xSnxTe (x=0.25) crystals doped with indium
001947 (1989) The transition layers in AlGaAs/GaAs and InGaAsP/GaAs heterostructures grown by LPE
001A32 (1989)
001A83 (1988)
001C88 (1986-03-16) Effect of heavy ion implantation and laser annealing on the structural properties of germanium

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