Serveur d'exploration sur l'Indium - Analysis (Russie)

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Composition < Composition effect < Compounded structure  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000183 (2008) Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000246 (2007) InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
000295 (2006) Resonant Raman scattering in InGaN alloys
000619 (2003) Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000651 (2003) InGaAsN/GaAs QD and QW structures grown by MOVPE
000675 (2003) Energy gap and optical properties of InxGa1-xN
000697 (2003) Adsorptive and electrical properties of InSb-ZnSe films
000780 (2002) Volume effect on the valence transition in Yb1-xRxInCu4 (R=Y, La, Ce, Lu) compounds
000793 (2002) Raman scattering study of type II GaInAsSb/InAs heterostructures
000798 (2002) Phase transitions under high pressure in binary Sn alloys (with In, Hg and Ga)
000804 (2002) On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities
000848 (2002) Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply
001476 (1994) Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation
001515 (1993) Structural peculiarities of lead-indium alloys
001A94 (1988)
001C41 (1987)

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