Chemical bonds < Chemical composition < Chemical compound

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 143.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000140 (2009)		Raman spectroscopy of Pb1-xSnxTe (In) single crystals
000160 (2009)		Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs
000195 (2008)		Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3-5 μm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3-5 μm)
000252 (2007)		From extended defects and interfaces to point defects in three dimensions-The case of InxGa1-xN
000275 (2007)		Analysis of the local indium composition in ultrathin InGaN layers
000295 (2006)		Resonant Raman scattering in InGaN alloys
000349 (2005)		Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000390 (2005)		Activation of aluminum metal and its reaction with water
000489 (2004)		Determination of band offsets in strained InxGa1-xAs/GaAs quantum wells by capacitance-voltage profiling and Schrödinger-poisson self-consistent simulation
000592 (2003)		Vapor growth of Pb1-xInxTe crystals
000612 (2003)		Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
000613 (2003)		Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys
000616 (2003)		Preparation and structure of AgGa1-xInxSe2 single crystals
000621 (2003)		Phase transition in a tetragonal In90Pb10 alloy under high pressure: a switch from c/a > 1 to c/a < 1
000649 (2003)		InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth
000664 (2003)		Growth of in-doped PbTe films on Si substrates
000665 (2003)		Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots
000673 (2003)		Evolution of CuInSe2 (1 1 2) surface due to annealing: XPS study
000687 (2003)		Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique
000690 (2003)		Band gap of hexagonal InN and InGaN alloys
000785 (2002)		Synthesis and optical absorption of solid solutions between InSb and II-VI compounds

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Chemical composition" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Chemical composition" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Chemical composition
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024