Serveur d'exploration sur l'Indium - Analysis (Russie)

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Charge carrier recombination < Charge carrier scattering < Charge carrier temperature  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]
Ident.Authors (with country if any)Title
001523 (1993) Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001660 (1992) Low-temperature mobility of a two-dimensional electron gas and the quality of a heterojunction in InGaAs/InP heterostructures grown by liquid phase epitaxy
001666 (1992) Investigation of structure defects in epitaxial indium arsenide films
001671 (1992) Influence of the indium impurity on the electrophysical properties of Pb1-xSnxTe with x>0.3
001725 (1991) Transport phenomena in Bi2-xInxTe2.85Se0.15 solid solutions
001765 (1991) Oscillatory photoluminescence excitation in InGaAs/GaAs strained-layer quantum well structures
001841 (1991) Characteristics of liquid phase epitaxy and of electrophysical properties of epitaxial In0.53Ga0.47As:Sb films
001943 (1990) Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers
001A17 (1989)
001A19 (1989)
001A87 (1988)
001B08 (1988)
001B33 (1988)
001B43 (1988)
001B93 (1987) Free carrier absorption in In1-xGaxAs
001C22 (1987)
001C28 (1987)
001C83 (1987)
001D34 (1986)
001D59 (1986)
001E13 (1985)

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