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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Carrier mobility »
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Carrier lifetime < Carrier mobility < Carrier relaxation time  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]
Ident.Authors (with country if any)Title
000094 (2010) Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis
000135 (2009) Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ
000255 (2007) Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
000423 (2004-02) Structures Based on Cu(Ag)InnSm Semiconductor Compounds
000687 (2003) Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique
000794 (2002) Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure
000852 (2002) Autosolitons in electron-hole plasma in InSb under hydrostatic pressure
000888 (2001-08) The Role of Lead in Growing Ga1 - XInXAsYSb1 - Y Solid Solutions by Liquid-Phase Epitaxy
000889 (2001-08) Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe2 Crystals
000947 (2001) Radiation-induced defects in n-type GaN and InN
000948 (2001) Radiation effects on the electrical activation processes in InSb under influence of nuclear reactor neutrons
000952 (2001) Preparation, structure, and electrical properties of thin In1-xCdxSb (x = 0.001-0.003) films
000987 (2001) Impact of carrier lateral transport and surface recombination on the PL efficiency of mesas with self-organized quantum dots
000A02 (2001) Effect of low-temperature diffusion annealing on the properties of PbSnTe(In) epilayers
000B13 (2000-03) Investigation of Barrier Tunneling Characteristics of Symmetrical Double Quantum Well in In0.25Ga0.75As / GaAs / In0.25Ga0.75As Heterostructure
000B24 (2000-02) Electrical Properties of InP Irradiated with Fast Neutrons in a Nuclear Reactor
000B68 (2000) LPE growth of GaSb and Sb-based solid solutions
000C29 (1999-11-08) Properties of two-dimensional electron gas containing self-organized quantum antidots
000C68 (1999-08) Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5μm
000C70 (1999-08) Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor
000C80 (1999-07) Electrical properties of nuclear-doped indium antimonide

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