Carrier concentration < Carrier density < Carrier lifetime

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 66.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000022 (2013)		Magnetoplasmon excitations from integer-filled Landau levels in narrow-gap quantum wells
000078 (2011)		Hot electron transport in heterostructures
000081 (2011)		High-Vacuum Evaporation of n-CuIn3Se5 Photoabsorber Films for Hybrid PV Structures
000090 (2010)		Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor
000133 (2009)		The fcc-bcc Bain path in In-Sn and related alloys at ambient and high pressure
000135 (2009)		Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ
000255 (2007)		Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
000273 (2007)		Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation
000301 (2006)		Photoluminescence of n-InN with low electron concentrations
000307 (2006)		Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy
000333 (2005)		Voltage-capacitance and admittance investigations of electron states in self-organized InAs/GaAs quantum dots
000337 (2005)		Temperature behavior of hot carrier dynamics in InP quantum dots
000366 (2005)		Manifestation of the equilibrium hole distribution in photoluminescence of n-InN
000385 (2005)		Coupled phonon-plasmon modes in indium phosphide observed by an ultrafast pump-probe technique
000432 (2004-01)		Strongly Compensated InAs Obtained by Proton Irradiation
000491 (2004)		Correlations between electrical and optical properties for OMVPE InN
000554 (2003-04-21)		Nonradiative recombination in quantum dots via Coulomb interaction with carriers in the barrier region
000594 (2003)		Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction
000647 (2003)		Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers
000652 (2003)		InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000658 (2003)		Hydrostatic pressure coefficients of the valence band maximum in Ge, InSb, InAs, and GaAs

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