Binary alloys < Binary compound < Binary compounds

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List of bibliographic references

Number of relevant bibliographic references: 42.
[0-20] [0 - 20][0 - 42][20-40]

Ident.	Authors (with country if any)	Title
000028 (2012)		Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
000045 (2012)		Failure mechanisms in blue InGaN/GaN LEDs for high power operation
000099 (2010)		Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
000182 (2008)		Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes
000237 (2007)		Optoelectronic sensors on GaSb-and InAs-based heterostructures for ecological monitoring and medical diagnostics
000281 (2006)		Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100-1230-nm spectral range
000348 (2005)		QD lasers : Physics and applications
000368 (2005)		Long wavelength VCSEL devices on GaAs substrates
000477 (2004)		Experimental investigation of Schottky barrier diodes as nonlinear elements in 800-nm-wavelength region
000625 (2003)		Optical memory concepts with self-organized quantum dots: material systems and energy-selective charging
000656 (2003)		InAs and InAsSb LEDs with built-in cavities
000659 (2003)		Hybrid organic-inorganic light-emitting diodes
000661 (2003)		High-mobility InAs/AlSb heterostructures for spintronics applications
000666 (2003)		Gateable spin memory in InP quantum dots
000682 (2003)		Effect of superstoichiometric Sb content on the electrical properties of InSb/α-Al2O3 photoconductive detectors
000696 (2003)		AlyIn1-ySb1-xBix/InSb photodetecting superlattices
000843 (2002)		Directional rolling of strained heterofilms
000846 (2002)		Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation
000A16 (2001)		1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
000A17 (2001)		1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
000C12 (2000)		0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

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