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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Antimony compounds »
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Antimony compound < Antimony compounds < Antimony oxides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 64.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000413 (2004-04) Investigation of Characteristics of InSb-Based Photodiode Linear Arrays
000418 (2004-03) Investigation of the Possibility of Obtaining Homogeneous Ga1 - xInxSb Crystals under Weak Flow Conditions
000515 (2003-10) InAs Based Multicomponent Solid Solutions for Thermophotovoltaic Converters
000519 (2003-09) Phenomena of the Collective Behavior of Autosolitons in a Dissipative Structure in InSb
000525 (2003-08) Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction
000528 (2003-08) Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000530 (2003-08) High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area
000532 (2003-08) Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000545 (2003-06) Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000561 (2003-04) Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000569 (2003-02-10) Unconventional Magnetoresistance in Long InSb Nanowires
000577 (2003-02) Effects of Doping and Preliminary Processing on the Magnetically Stimulated Mobility of Dislocations in InSb Single Crystals
000582 (2003-01-25) Zinc(P) diffusion in In0.53Ga0.47As and GaSb for TPV devices
000583 (2003-01-25) Low-Bandgap Ge and InAsSbP/InAs-Based TPV Cells
000584 (2003-01-25) Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP
000585 (2003-01-25) An Overview of TPV Cell Technologies
000704 (2002-12) MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells
000711 (2002-11) Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux
000720 (2002-09) Optical Storage on the Basis of an n-InSb-SiO2-p-Si Heterostructure
000724 (2002-08-25) Cyclotron Resonance in the InAs/GaSb Heterostructure in an Inclined Magnetic Field
000727 (2002-08-12) 6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

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